MIMMG25H120XB6TN 1200v 25a pim module r oh s c om plia nt fea t ures high l e v e l o f integratio n ?o n l y o n e p o w e r semico nductor modu le req u i r e d for the w h o l e drive l o w satur a tion v o l t age a n d positive temperature coef fic i e n t f a s t s w i tch i ng a n d short t a il current f ree w hee l i ng d i o d es w i th fast and sof t reverse recov e r y industr y s t a ndar d p a cka g e w i th i n s u lated copp er bas e plate a n d s o lderi ng p i ns fo r pcb mounti ng t e mperatur e sense i n c l u d ed applica t ions ac motor c ontrol motion/serv o control inverter a n d p o w e r sup p l i es invert e r sect o r absolute maximum ra tings t c = 25c unless oth e rwise s p ecifie d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s coll ector - emitter v o l t age t v j v 0 0 2 1 c 5 2 = v ges gate - emitter v o lt age 20 v t c = 25 c 40 a i c dc col l ector c u rrent t c a 5 2 c 0 8 = i c m rep e ti ti ve peak collect o r cur rent t p a 0 5 s m 1 = p tot w 7 4 1 t b g i r e p n o i t a p i s s i d r e w o p diode v rrm rep e titive rev e rse v o l t a g e t v j v 0 0 2 1 c 5 2 = t c a 5 3 c 5 2 = i f( a v ) a vera ge fo r w a rd curre nt t c a 5 2 c 0 8 = i frm rep e ti tive peak fo r w a r d curr ent t p a 0 5 s m 1 = i 2 t t v j =125c, t= 10ms, v r = 0 v 200 a 2 s pim three phase input rectifier
MIMMG25H120XB6TN invert e r sect o r electrical and thermal cha racteristics t c = 25c unless oth e rwise s p e c ified sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v g e (th) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 1 ma 5.0 5.8 6.5 v i c = 25a, v g e = 1 5 v , t v j = 25c 1.7 v v c e ( sat ) collector - emitter saturatio n v o l t age i c = 25a, v g e = 1 5 v , t v j = 125c 1.9 v v c e = 1200 v , v g e = 0 v , t v j = 25c 0.1 ma i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t v j = 125 c 1 ma i ges gate leak age current v c e = 0 v , v g e 15v , t v j = 125c -400 400 na r gint 0 . 8 r o t s i s e r e t a g d e t a r g e t n i ? q ge gate charge v c e = 600v , i c = 25a , v g e = 1 5 v 0.24 c c i e s f n 1 8 . 1 e c n a t i c a p a c t u p n i c res revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 08 n f t v j =25c 90 ns t d(on) t u rn - on delay t i me t v j =125 c 90 n s t v j =25 c 30 n s t r rise t i me v c c = 600 v , i c = 25a, r g =3 6 , v g e = 15v , inductive l o ad t v j =125c 50 ns t v j =25c 420 ns t d(off) t u rn - o f f delay t i me t v j =125c 520 n s t v j =25 c 70 n s t f fall t i me v c c = 600 v , i c = 25a, r g =3 6 , v g e = 15v , inductive l o ad t v j =125c 90 ns t v j =25c 2 .4 mj e on t u rn - on energ y t v j =125c 3 .5 mj t v j =25c 1 .8 mj e off t u rn - of f energ y v c c = 600 v , i c = 25a, r g =3 6 , v g e = 15v , inductive l o ad t v j =125c 2 .1 mj i s c short circu it current t p s c 10s , v g e = 15v t v j = 125c,v c c = 900v 100 a r thj c junctio n -to-ca se t hermal r e sist ance per igbt 0.85 k /w diode i f = 25a , v g e = 0 v , t v j =25c 1.55 v v f f o r w ard v olt age i f = 25a , v g e = 0 v , t v j =125c 1.54 v t rr s n 0 0 2 e m i t y r e v o c e r e s r e v e r i rrm a 0 2 t n e r r u c y r e v o c e r e s r e v e r . x a m e rec revers e recove r y e nergy i f = 25a , v r = 600v d i f /d t= -400a/ s t v j =125c 1 .5 m j r thj c d junctio n -to-ca se t hermal r e sist ance pe r diode 1.4 k /w
MIMMG25H120XB6TN diode-re ctifier s e ct or absolute maximum ra tings t c = 25c unless oth e rwise s p ecifie d diode-re ctifier s e ct or electrical and thermal cha racteristics t c = 25c unless oth e rwise s p e c ified brake-choppe r sec t o r absolute maximum ra tings t c = 25c unless oth e rwise s p ecifie d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s v rrm rep e titive rev e rse v o l t a g e t v j v 0 0 6 1 c 5 2 = i f( a v ) a vera ge fo r w a rd curre nt t c a 5 2 c 0 8 = t v j =45c, t= 10ms, 50hz 250 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t v j =45c, t= 8.3ms, 60hz 300 a t v j =45c, t= 10ms, 50hz 312 a 2 s i 2 t t v j =45c, t= 8.3ms, 60hz 450 a 2 s sy mbol pa rame ter t est condit i o n s min. t y p. max. unit i f = 25a , t v j =2 5c 1 .1 v v f f o r w ard v olt age i f = 25a , t v j =1 25c 1.00 v v r = 160 0 v , t v j = 25c 50 a i r revers e leak a ge curr ent v r = 160 0 v , t v j = 125c 1 ma r thj c d junctio n -to-ca se t hermal r e sist ance pe r diode 1.35 k /w t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s coll ector - emitter v o l t age t v j v 0 0 2 1 c 5 2 = v ges gate - emitter v o lt age 20 v t c = 25 c 25 a i c dc col l ector c u rrent t c a 5 1 c 0 8 = i c m rep e ti ti ve peak collect o r cur rent t p a 0 3 s m 1 = p tot w 5 0 1 t b g i r e p n o i t a p i s s i d r e w o p diode v rrm rep e titive rev e rse v o l t a g e t v j v 0 0 2 1 c 5 2 = t c a 5 2 c 5 2 = i f( a v ) a vera ge fo r w a rd curre nt t c a 5 1 c 0 8 = i frm rep e ti tive peak fo r w a r d curr ent t p a 0 3 s m 1 = i 2 t t v j =125c, t= 10ms, v r = 0 v 60 a 2 s
MIMMG25H120XB6TN brake-choppe r sec t o r electrical and thermal cha racteristics t c = 25c unless oth e rwise s p e c ified sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v g e (th) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 0 .6ma 5.0 5.8 6.5 v i c = 15a, v g e = 1 5 v , t v j = 25c 1.7 v v c e ( sat ) collector - emitter saturatio n v o l t age i c = 15a, v g e = 1 5 v , t v j = 125c 1.9 v v c e = 1200 v , v g e = 0 v , t v j = 25c 50 a i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t v j = 125 c 1 ma i ges gate leak age current v c e = 0 v , v g e 15v , t v j = 125c -400 400 na r gint 0 r o t s i s e r e t a g d e t a r g e t n i q ge gate charge v c e = 600v , i c = 15a , v g e = 1 5 v 0.15 c c i e s f n 1 . 1 e c n a t i c a p a c t u p n i c res revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 05 n f t v j =25c 90 ns t d(on) t u rn - on delay t i me t v j =125 c 90 n s t v j =25 c 25 n s t r rise t i me v c c = 600 v , i c = 15a, r g =6 2 , v g e = 15v , inductive l o ad t v j =125c 30 ns t v j =25c 420 ns t d(off) t u rn - o f f delay t i me t v j =125c 520 n s t v j =25 c 90 n s t f fall t i me v c c = 600 v , i c = 15a, r g =6 2 , v g e = 15v , inductive l o ad t v j =125c 120 ns t v j =25c 1 .4 mj e on t u rn - on energ y t v j =125c 2 .0 mj t v j =25c 1 .0 mj e off t u rn - of f energ y v c c = 600 v , i c = 15a, r g =6 2 , v g e = 15v , inductive l o ad t v j =125c 1 .2 mj i s c short circu it current t p s c 10s , v g e = 15v t v j = 125c,v c c = 900v 45 a r thj c junctio n -to-ca se t hermal r e sist ance per igbt 1.2 k /w diode i f = 15a , v g e = 0 v , t v j =25c 1.65 v v f f o r w ard v olt age i f = 15a , v g e = 0 v , t v j =125c 1.75 v t rr s n 0 5 1 e m i t y r e v o c e r e s r e v e r i rrm a 5 1 t n e r r u c y r e v o c e r e s r e v e r . x a m e rec revers e recove r y e nergy i f = 15a , v r = 600v d i f /d t= -400a/ s t v j =125c 0 .6 m j r thj c d junctio n -to-ca se t hermal r e sist ance pe r diode 2.1 k /w
MIMMG25H120XB6TN ntc s e c t or char acte r istic v a lu es t c = 25c unless otherwise s p e c ified module charac t eristics t c = 25 c unless oth e rwise s p ecifie d sy mbol pa rame ter t est condit i o n s min. t y p. max. unit r 2 5 t e c n a t s i s e r c k 5 c 5 2 = b 25/5 0 337 5 k sy mbol pa rame ter t est condit i o n s min. t y p. max. unit t v j max c 0 5 1 e r u t a r e p m e t n o i t c n u j . x a m t v j o p c 5 2 1 0 4 - e r u t a r e p m e t g n i t a r e p o t s t g c 5 2 1 0 4 - e r u t a r e p m e t e g a r o t s v i so l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i 0 5 2 x e d n i g n i k c a r t e v i t a r a p m o c i t c m d mounti ng t o r q ue recomme n d e d m5 2 . 5 5 n m g 0 8 1 t h g i e w i c (a) v c e v f i gure 1 . t y pic a l output chara cteristics igb t -inverter t v j =125c t v j =25 c 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v c e v f i gure 2 . t y pic a l output chara cteristics igb t -inverter 4.0 3.5 3.0 2.5 1.5 1.0 0.5 0 i c (a) t v j =125c 2.0 4 .5 5.0 v g e =15v 5 0 4 0 3 0 2 0 1 0 0 3.5
MIMMG25H120XB6TN 4 5 0 1 0 2 0 3 0 4 0 5 0 v g e v f i gure 3 . t y pic a l t ransfe r char a cte ri sti cs igb t -inverter 0 2 3 1 0 0 1 0 2 0 3 0 40 7 0 e on e off ( mj ) e o n e o f f r g f i gure 4 . s w itc h i n g ener g y vs. gate resistor igb t -inverter v ce = 600v i c =25 a v g e =15v t v j =125c 0 10 i c a f i gure 5 . s w itc h in g ener g y vs . collector c u rr ent igb t -inverter v ce = 600v r g =36 v g e = 15v t v j =125c 40 30 20 0 200 400 600 800 100 0 120 0 v c e v f i gure 6 . reve r se biase d sa fe opera ting are a igb t -inverter 140 0 10 i c (a) 20 30 40 50 t v j =125c t v j =25c v c e =20v e o f f e o n 1 2 10 9 7 6 5 8 0 2 4 6 10 e on e off ( mj ) r g =36 ? v g e =15v t v j =125c i c (a) 8 e rec ( mj ) r g f i gure 8 . s w itc h in g en erg y vs . gate resistor diod e -inv erter v f v f i gure 7 . diode fo r w a r d c h a r acteristics diod e -inv erter 0.5 0 1 . 0 1.5 2.0 3.0 0 1 0 2 0 3 0 40 50 60 7 0 0 10 30 40 50 20 i f ( a ) t v j =25 c t v j =125c 2.0 1.5 1.0 0.5 0 2.5 3.0 1 1 50 60 5 0 2.5 i f =25 a v ce = 600v t v j =125c
MIMMG25H120XB6TN e rec ( mj ) 2.0 1.5 1.0 0.5 0 10 i f (a) f i gure 9 . s w itc h in g ener g y vs . fo r w ard c u rr ent diod e - i nverte r 5 0 30 20 0 rect a n gul ar pulse d u ratio n (secon ds) f i gure 10. t ransient t hermal imped ance of diod e a n d igbt -inverter t j =150c t c =25c v g e =15v t s c 10 s z thj c ( k/w ) 2.5 3.0 0 . 001 0 . 0 1 0 . 1 1 1 0 0.01 0.1 1 1 0 r g =36 ? v ce = 600v t v j =125c 40 diod e igb t v f v f i gure1 1 . diode fo r w a rd c h a racteristi cs diod e - rectifier 0.2 0 0 . 4 0.6 0.8 1.6 0 10 30 40 50 20 i f ( a ) t v j =25 c t v j =125c 1.0 i f =25 a v ce = 600v t v j =125c 1 .2 1 .4 i c (a) v c e v f i gure 12. t y p i c a l ou tput c h a ra cte ri sti cs igbt - brake c h opp er t v j =125c t v j =25 c 3 0 2 0 1 5 1 0 5 0 0 0.5 1. 0 1 . 5 2.0 2.5 3.0 v g e =15v 3.5 2 5 v f v f i gure 13. diode fo r w a rd c h a ra cte ri sti cs diod e - brake c hop per 0.4 0 0 . 8 1.2 1.6 i f ( a ) t v j =25 c t v j =125c 2.0 i f =25 a v ce = 600v t v j =125c 2 .4 2 .8 r ( ) t c c f i gure 14. n t c characte r i s ti c s t v j =125c t v j =25 c 100 0 0 0 100 0 0 100 0 100 0 2 0 4 0 6 0 80 100 v g e =15v 140 30 20 15 10 5 0 25 120 160 r
MIMMG25H120XB6TN f i gure 1 5 . c i rc u i t d i a g r a m dimen s ions (mm) f i gure 16. pack age outli ne
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